Samsung 960 Evo Polaris 1Tb M.2 2280 PCI-E 3.0 X4 NVME Solid State Drive

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  • Technical Specification
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MPN: MZ-V6E1T0BW EAN: 8806088540115

Item number MLJ7P

Discover the next advancement in SSD technology with our high-performance, highly reliable 960 EVO Series NVMe M.2 SSDs.

Non-Volatile Memory Express (NVMe) with a new Polaris controller outperforms our SATA SSDs with exceptionally fast read/write speeds, and Samsung TurboWrite technology accelerates write speeds even further.

Samsung's Magician software solution provides advanced functionality to manage, monitor and optimize drive performance.
  • Data Storage Capacity: 1 Tb
  • Depth: 2 CM
  • Next-generation M.2 SSD with Samsung V-Nand Technology and Samsung Polaris controller
  • M.2 2280 form factor (80mm length)
  • Read speed up to 3,200MB/s - write speed up to 1,900MB/s
  • Low power consumption means longer battery life
  • Height: 8 CM
  • Width: 2.2 CM

Product Features

  • Raise your performance expectations
    Enhanced bandwidth beyond the SATA interface provided by the NVMe interface, combined with the Polaris controller facilitates sequential Read/Write speeds. Plus, the Intelligent TurboWrite technology accelerates write speeds even further.
  • Rest easy with solid reliability
    The 960 EVO holds its own by boasting up the capacity model. Dynamic Thermal Guard prevents overheating, protecting your data and ensuring optimal performance.
  • Manage your drive like magic
    The 960 EVO comes with the Magician - an advanced software solution for users to monitor, manage and maintain the drive. Magician provides personalized firmware checking and additional functions tailored for individual user's drives. It even updates the firmware automatically to make sure that the drive's performance stays up to date.

Technical Specification

Product DescriptionSamsung 960 EVO MZ-V6E1T0BW - solid state drive - 1 TB - PCI Express 3.0 x4 (NVMe)
TypeSolid state drive - internal
Capacity1 TB
Hardware EncryptionYes
Encryption Algorithm256-bit AES
NAND Flash Memory TypeTriple-level cell (TLC)
Form FactorM.2 2280
InterfacePCI Express 3.0 x4 (NVMe)
FeaturesTRIM support, sleep mode, Auto Garbage Collection Algorithm, TurboWrite Technology, V-NAND Technology, eDrive, NVM Express (NVMe), S.M.A.R.T., 256-bit AES, IEEE 1667
Dimensions (WxDxH)22.1 mm x 80 mm x 2.28 mm
Weight9 g
Manufacturer Warranty3 years warranty